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AN INTEGRATED PICOSECOND PULSE GENERATION CIRCUITTech for Transfer CURF_Techsell 21-05-2015 This invention features an on-chip picosecond pulse generator that can be implemented using complementary metal-oxide-semiconductor (CMOS). Optoelectronics Semiconductors Tell me more |
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OPTICAL COOLING OF SOLIDS.Tech for Transfer UOC__techsell 08-06-2015 This is a new apparatus and method for laser cooling of a solid to extremely low temperatures. The device includes an active cooling structure having a high purity surface passivated direct band gap semiconductor crystal of less than about 3 microns thick and a transparent hemispherical body in optical contact with the crystal. Lasers Semiconductors Tell me more |
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OPTICAL TESTING OF A MULTI QUANTUM WELL SEMICONDUCTOR DEVICETech for Transfer TTO 16-12-2015 A pump light pulse generates a strain pulse in a sample that includes quantum wells. The strain pulse triggers a change in an optical property of the sample producing a signal. The signal is measured using a probe light pulse which is delayed in relation to the pump light pulse. Parameters of interest of the sample, including the quantum wells, can be deduced from the characteristics of the signal. For discerning between various components of the stress in the quantum wells, a lead pump pulse preceding the pump light pulse may also be used. A system for the application of such methods is also disclosed. Quantum Optics Semiconductors Tell me more |
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THREE-DIMENSIONAL SILICON COLLOIDAL PHOTONIC CRYSTALS FOR MICROPHOTONIC DEVICESTech for Transfer TTO 16-12-2015 Synthetic Silicon colloidal photonic crystal was built using a new synthesis process based upon Micromolding in Inverse Silica Opals (MISO). It presents a novel topology with a full photonic band gap, making it useful as a component of all-optical microphotonic crystal devices, circuits and computers. Optical Components & Devices Photonic Crystals Semiconductors Tell me more |
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III-V PHOTONIC INTEGRATION ON SILICONTech for Transfer TTO 17-12-2015 Technology for making photonic integrated circuits on silicon by bonding a wafer of III-V material as an active region to silicon and removing the substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with CMOS integrated circuits. Optoelectronics Semiconductors Tell me more |
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CIRCUIT ELEMENT WITH PHOTONIC CORETech for Transfer TTO 17-12-2015 Circuit element with four electrical terminals based on a photonic core inside the circuit that uses a wide bandgap semiconductor material. The wide bandgap material exhibits photoconductivity and allows current flow through the material in response to incident light. Optoelectronics Semiconductors Tell me more |
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PHOTON PAIR SOURCE CONTROLLED BY QUANTUM DOTSTech for Transfer TTO 18-12-2015 The invention presents a method for the production of a photon pair source to generate entangled photon pairs, where the operational behaviour of the source is determined by adjusting the fine structure splitting of the excitonic energy level of one or more quantum dots. The fine structure splitting can be adjusted by depositing the quantum dot(s) on a particular crystal face of a semiconductor substrate. Quantum Optics Semiconductors Quantum Dots Tell me more |
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WAVEGUIDE-BASED PHOTONIC INTEGRATED COMPONENT PATTERNED WITH OPTICAL ANTENNA ARRAYSTech for Transfer TTO 18-12-2015 Integrated photonic device comprising an array of antennas on an optical waveguide to control the propagation of light through the waveguide and realize waveguide mode conversion and on-chip nonlinear optical processes. Non-Linear Optics Semiconductors Waveguides Tell me more |
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SPIRAL SOLAR CELL WITH ENHANCED ABSORPTIONTech for Transfer TTO 19-12-2015 This technology provides improved solar cells with an increase in light absorption of up to 90%. It is based on semiconducting two-dimensional materials which exhibit great mechanical flexibility and can be rolled into a stack to make a spiral solar cell. The multi-layered cylinder structure is responsible for enhanced light matter interaction and hence for raising the absorption. Photovoltaics Semiconductors Tell me more |
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LOW-TEMPERATURE, HIGH-RATE NITRIDE ALLOY GROWTH PROCESSTech for Transfer TTO 19-12-2015 Group-III Nitride semiconductor alloy growth process that works at lower temperatures while achieving higher growth rates than conventional processes. This method improves upon other processes by periodically modulating the metal flux while maintaining a constant nitrogen flux. Semiconductors Thin-Film Materials Tell me more |
